smd type ic 1 smd type 2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 1gate 2drain 3source 2SK3365 features super low on-state resistance: r ds(on)1 =14m max. (v gs =10v,i d =15a) r ds(on)2 = 21m max. (v gs =4.5v,i d = 15a) r ds(on)3 = 29m max. (v gs =4v,i d = 15a) low c iss :c iss = 1300 pf typ. built-in gate protection diode absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 30 v gate to source voltage v gss 20 v i d 30 a i dp * 120 a power dissipation t a =25 1.0 t c =25 36 channel temperature t ch 150 storage temperature t stg -55to+150 *pw 10 s,duty cycle 1% drain current p d w electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain cut-off current i dss v ds =30v,v gs =0 10 a gate leakage current i gss v gs = 20v,v ds =0 10 a gat cutoff voltage v gs(off) v ds =10v,i d =1ma 1.5 2.0 2.5 v forward transfer admittance y fs v ds =10v,i d =15a 8.0 16.0 s v gs =10v,i d =15a 11.5 14 m v gs =4.5v,i d =15a 15.2 21 m v gs =4.0v,i d =15a 18 29 m input capacitance c iss 1300 pf output capacitance c oss 405 pf reverse transfer capacitance c rss 190 pf turn-on delay time t on 37 ns rise time t r 500 ns turn-off delay time t off 75 ns fall time tf 95 ns total gate charge q g 25 nc gate to source charge q gs 4.5 nc gate to drain charge q gd 7.0 nc v ds =10v,v gs =0,f=1mhz i d =15a,v gs(on) =10v,r g =10 ,v dd =15v v dd = 24v, v gs =10v,i d = 30a drain to source on-state resistance r ds(on) smd type ic mosfet smd type smd type ic smd type smd type ic smd type transistors smd type ic smd type smd type smd type smd type ic smd type smd type smd type smd type smd type product specification 4008-318-123 sales@twtysemi.com 1 of 1 http://www.twtysemi.com
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